Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature
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DOI: 10.1016/j.carbon.2017.05.046
Abstract: In this paper, flash annealing at high temperature (HT) is adopted to fabricate graphene through thermal decomposition of SiC. Interestingly, surface roughening will lead to near-free-standing epitaxial graphene (EG) decouple from SiC substrate. The process… read more here.
Keywords: free standing; near free; graphene; flash annealing ... See more keywords