Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation
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DOI: 10.1063/1.4980017
Abstract: The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm,… read more here.
Keywords: diamond; iia diamond; lateral migration; migration ... See more keywords