Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor
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DOI: 10.1109/tns.2020.2971646
Abstract: The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which forms an extracting path for… read more here.
Keywords: mos controlled; controlled thyristor; anode short; displacement damage ... See more keywords