Hybrid Anodic and Metal-Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires.
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DOI: 10.1002/smll.201803898
Abstract: Silicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabricate nanostructures on… read more here.
Keywords: silicon carbide; anodic metal; metal assisted; hybrid anodic ... See more keywords