Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures
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DOI: 10.3390/nano13030439
Abstract: Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are… read more here.
Keywords: parallel structures; characteristics ferroelectric; like parallel; memory ... See more keywords