Epitaxial growth and band structure of antiferromagnetic Mott insulator CeOI
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DOI: 10.1103/physrevmaterials.4.064003
Abstract: The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by DFT+U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy.… read more here.
Keywords: epitaxial growth; growth band; antiferromagnetic mott; mott insulator ... See more keywords