Strain-induced antipolar phase in hafnia stabilizes robust thin-film ferroelectricity
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DOI: 10.1126/sciadv.add5953
Abstract: Hafnia (HfO2) is a promising candidate for next-generation ferroelectric devices due to its robust ferroelectricity at reduced dimensions and its compatibility with silicon technology. Unfortunately, the origin of robust ferroelectricity and the underlying phase transition… read more here.
Keywords: hafnia; ferroelectricity; phase transition; strain ... See more keywords