Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
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DOI: 10.1063/1.5098070
Abstract: The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promising defect for applications in quantum communication. In the positive charge state, CSiVC+ can be engineered to produce ultrabright single photon… read more here.
Keywords: state; antisite vacancy; charge state; carbon antisite ... See more keywords
Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
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DOI: 10.1063/5.0059953
Abstract: Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to ∼1.1 eV have been… read more here.
Keywords: vacancy pair; antisite vacancy; deep levels;