From parabolic approximation to evanescent mode analysis on SOI MOSFET
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DOI: 10.1088/1674-4926/38/2/024005
Abstract: Subthreshold conduction is governed by the potential distribution. We focus on full two-dimensional (2D) analytical modeling in order to evaluate the 2D potential profile within the active area of FinFET structure. Surfaces and interfaces, which… read more here.
Keywords: approximation evanescent; evanescent mode; parabolic approximation; approximation ... See more keywords