Influence of P+ Body on Performance and Ruggedness of 1.2 kV 4H-SiC MOSFETs
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DOI: 10.1109/ted.2024.3474615
Abstract: This article reports an investigation into the impact of P+ body design in 4H-silicon carbide (SiC) MOSFETs. Specifically, 1.2 kV SiC MOSFETs with various P+ body designs were fabricated and analyzed. MOSFETs with stripe pattern… read more here.
Keywords: ruggedness; influence body; area body; sic mosfets ... See more keywords