Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.10.032
Abstract: Abstract Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL)… read more here.
Keywords: gan nanostructures; selective area; area growth; pre orienting ... See more keywords
Selective area growth of GaN nanowires on Si(1 1 1) substrate with Ti masks by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125181
Abstract: Abstract We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a… read more here.
Keywords: growth; gan nanowires; molecular beam; nanowires substrate ... See more keywords
Selective area growth and stencil lithography for in situ fabricated quantum devices
Sign Up to like & getrecommendations! Published in 2019 at "Nature Nanotechnology"
DOI: 10.1038/s41565-019-0506-y
Abstract: The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana… read more here.
Keywords: quantum; selective area; area growth; stencil lithography ... See more keywords
Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022298
Abstract: Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN… read more here.
Keywords: aln substrates; ingan based; selective area; area growth ... See more keywords
Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16062462
Abstract: This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition… read more here.
Keywords: growth; plateau region; selective area; plateau patterned ... See more keywords
Criterion for Selective Area Growth of III-V Nanowires
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12203698
Abstract: A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within… read more here.
Keywords: iii; iii nanowires; area growth; selective area ... See more keywords