Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth
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DOI: 10.1039/c7ce02036h
Abstract: We realized the selective-area lateral epitaxial overgrowth of SiC on a 6H-SiC (0001) seed crystal by controlling the supersaturation in sublimation growth. For crystal growth from the vapor phase, the nucleation and growth rate of… read more here.
Keywords: seed; area lateral; selective area; lateral epitaxial ... See more keywords