Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET
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DOI: 10.1109/jsen.2018.2887277
Abstract: This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as… read more here.
Keywords: gasb inas; around biotunnel; gate; model gasb ... See more keywords