Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions
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DOI: 10.1142/s0219581x19500194
Abstract: Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimu... read more here.
Keywords: arsenide implanted; implanted silicon; intersubband absorption; gallium arsenide ... See more keywords