Articles with "artificial synaptic" as a keyword



Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

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Published in 2024 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202314649

Abstract: Artificial synaptic devices (ASDs) are attracting widespread attention as highly promising components for use in complex neuromorphic systems, playing crucial roles in addressing the challenges posed by the conventional von Neumann architecture. However, the instabilities… read more here.

Keywords: temperature; artificial synaptic; charge trapping; layered wide ... See more keywords

Circularly Polarized Light‐Resolved Artificial Synaptic Transistors Based on Cellulose Nanocrystal Dielectric

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Published in 2025 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202416920

Abstract: Circularly polarized light (CPL)‐responsive artificial synaptic devices are of significant interest for advanced neuromorphic visual systems, as they enhance perceptual capabilities and enable the development of novel applications. Nevertheless, progress in this field is hindered… read more here.

Keywords: artificial synaptic; cpl; synaptic transistors; circularly polarized ... See more keywords

In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual Learning.

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Published in 2024 at "Small"

DOI: 10.1002/smll.202401150

Abstract: The unique optical and electrical properties of graphene-based heterojunctions make them significant for artificial synaptic devices, promoting the advancement of biomimetic vision systems. However, mass production and integration of device arrays are necessary for visual… read more here.

Keywords: artificial synaptic; patterned graphene; situ growth; wafer scale ... See more keywords

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c14029

Abstract: Neuromorphic computing, which mimics brain function, can address the shortcomings of the "von Neumann" system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the… read more here.

Keywords: amorphous inalzno; synaptic devices; optoelectronic artificial; artificial synaptic ... See more keywords

Two-Terminal Ferroelectric Artificial Synaptic Devices with Asymmetric Structure.

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Published in 2025 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.5c18166

Abstract: As an excellent nonvolatile memory device, two-terminal ferroelectric devices have been widely used in neuromorphic computing, promoting research on the integration of in-memory sensing and computing. In this study, we proposed a two-dimensional ferroelectric device… read more here.

Keywords: artificial synaptic; synaptic devices; terminal ferroelectric; two terminal ... See more keywords

Enhancement of the Proton-Electron Coupling Effect by an Ionic Oxide-Based Proton Reservoir for High-Performance Artificial Synaptic Transistors.

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Published in 2025 at "ACS nano"

DOI: 10.1021/acsnano.4c10732

Abstract: Artificial synapses for neuromorphic computing have been increasingly highlighted, owing to their capacity to emulate brain activity. In particular, solid-state electrolyte-gated electrodes have garnered significant attention because they enable the simultaneous achievement of outstanding synaptic… read more here.

Keywords: artificial synaptic; proton reservoir; proton; synaptic characteristics ... See more keywords

α-Fe2O3-based artificial synaptic RRAM device for pattern recognition using artificial neural networks

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Published in 2023 at "Nanotechnology"

DOI: 10.1088/1361-6528/acc811

Abstract: We report on the α -Fe2O3-based artificial synaptic resistive random access memory device, which is a promising candidate for artificial neural networks (ANN) to recognize the images. The device consists of a structure Ag/α-Fe2O3/FTO and… read more here.

Keywords: based artificial; artificial synaptic; device; pattern recognition ... See more keywords

Ultrathin AlO x layer modified ferroelectric organic field-effect transistor for artificial synaptic characteristics

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Published in 2023 at "Nanotechnology"

DOI: 10.1088/1361-6528/acd11e

Abstract: The challenges associated with autonomous information processing and storage will be resolved by neuromorphic computing, which takes inspiration from neural networks in the human brain. To create suitable artificial synaptic devices for artificial intelligence, it… read more here.

Keywords: transistor; ultrathin alo; plasticity; alo layer ... See more keywords

CMOS-Compatible Embedded Artificial Synaptic Device (eASD) for Neuromorphic Computing and AI Applications

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Published in 2024 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2023.3346857

Abstract: The research showcases innovative embedded artificial synaptic devices (eASDs) implemented in a CMOS logic platform. These eASD devices demonstrate a large sensing window, exceptional endurance, and reliable data retention. Moreover, they can seamlessly integrate into… read more here.

Keywords: artificial synaptic; cmos compatible; easd; embedded artificial ... See more keywords

Biocompatible Potato-Starch Electrolyte-Based Coplanar Gate-Type Artificial Synaptic Transistors on Paper Substrates

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Published in 2022 at "International Journal of Molecular Sciences"

DOI: 10.3390/ijms232415901

Abstract: In this study, we propose the use of artificial synaptic transistors with coplanar-gate structures fabricated on paper substrates comprising biocompatible and low-cost potato-starch electrolyte and indium–gallium–zinc oxide (IGZO) channels. The electrical double layer (EDL) gating… read more here.

Keywords: artificial synaptic; starch electrolyte; potato starch; potato ... See more keywords

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

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Published in 2023 at "Materials"

DOI: 10.3390/ma16041687

Abstract: In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a… read more here.

Keywords: wox tan; artificial synaptic; resistive switching; ito wox ... See more keywords