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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2966546
Abstract: The ON-state ${I}$ – ${V}$ characteristics of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are affected by the bias dependencies of four parameters, namely—virtual gate length, mobility, saturation velocity, and the channel-length modulation (CLM) parameter—this is…
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Keywords:
assessment universal;
model simulating;
fet model;
model ... See more keywords