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Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.07.005
Abstract: Abstract The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute for high data reliability. But the single ended nature of read operation demands a complete Vdd swing of high capacitive…
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Keywords:
technique;
energy;
assist technique;
sram ... See more keywords