Investigation of carbon incorporation in laser-assisted MOCVD of GaN
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DOI: 10.1063/5.0144584
Abstract: Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD… read more here.
Keywords: carbon; growth; incorporation; assisted mocvd ... See more keywords