Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy
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DOI: 10.1063/1.5004077
Abstract: The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the… read more here.
Keywords: defects soi; intrinsic defects; generation associated; soi based ... See more keywords