Ultrathin body nanowire hetero-dielectric stacked asymmetric halo doped junctionless accumulation mode MOSFET for enhanced electrical characteristics and negative bias stability
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DOI: 10.1016/j.spmi.2019.106364
Abstract: Abstract This paper presents a 2-D analytical model of ultrathin hetero dielectric, asymmetric halo doped graded channel (HDGC) nanowire junctionless accumulation mode (JAM) MOSFETs obtained by incorporating the concepts of gate-oxide engineering (i.e., hetero dielectric)… read more here.
Keywords: accumulation mode; asymmetric halo; hetero; halo doped ... See more keywords