Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides
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DOI: 10.1515/nanoph-2020-0397
Abstract: Abstract Transition metal dichalcogenide (TMD) semiconductor heterostructures are actively explored as a new platform for quantum optoelectronic systems. Most state of the art devices make use of insulating hexagonal boron nitride (hBN) that acts as… read more here.
Keywords: transition; transition metal; auger; photoelectric effect ... See more keywords