Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
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DOI: 10.1002/aelm.201800407
Abstract: Financial support from the Spanish Government, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R, MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) was acknowledged.… read more here.
Keywords: asymmetric resistive; batio3 tunnel; tunnel junctions; switching dynamics ... See more keywords
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions
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DOI: 10.1186/s11671-018-2513-6
Abstract: Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time… read more here.
Keywords: asymmetric resistive; batio3 srtio3; srtio3 epitaxial; effect ... See more keywords