Influence of annealing atmosphere on crystallization of amorphous Si 1-x Ge x thin film by Raman spectroscopy
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DOI: 10.1016/j.tsf.2018.04.032
Abstract: Abstract The influence of annealing atmosphere on the crystallization behavior of amorphous structure in a-Si1-xGex thin films was studied with Raman spectroscopy. We annealed a-Si1-xGex (x = 0, 0.14, 0.27) thin films at 800 °C under various atmosphere… read more here.
Keywords: annealing atmosphere; crystallization; atmosphere crystallization; spectroscopy ... See more keywords