In Situ Atomic Tracking on the Interfacial Etching and Reconfiguration of Cu-ReSe2 Contact during Thermal Annealing.
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DOI: 10.1021/acs.nanolett.5c00092
Abstract: The Schottky barrier height can be greatly affected by the metal diffusion, reaction, and covalent bonding formation at the contact. Exploring novel methods and revealing the fundamental mechanisms for contact engineering are of vital importance… read more here.
Keywords: tracking interfacial; rese2 contact; atomic tracking; rese2 ... See more keywords