Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
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DOI: 10.7567/apex.11.061501
Abstract: We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced… read more here.
Keywords: negative fixed; atoms al2o3; gate leakage; fixed charge ... See more keywords