Sign Up to like & get
recommendations!
0
Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c20003
Abstract: Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as Shockley-Reed-Hall and Auger recombinations, electron-hole wavefunction separation from polarization charges, carrier leakage, and current…
read more here.
Keywords:
optical cavity;
carrier;
ingan gan;
auger coefficient ... See more keywords