Observation of photoemission behaviour during avalanche breakdown of insulated gate bipolar transistor with defect in the metal contact
Sign Up to like & getrecommendations! Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114365
Abstract: Abstract Under unclamped inductive switching (UIS) condition, there is non-uniformity in the intra-chip distribution of avalanche breakdown current in insulated gate bipolar transistors (IGBTs). The “current filaments”, which are concentrations of current caused by the… read more here.
Keywords: observation; avalanche breakdown; defect; behaviour ... See more keywords
Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.07.011
Abstract: Abstract Avalanche breakdown of novel 650 V SiC Schottky-barrier rectifiers is investigated. The rectifier diode has low leakage current for the temperatures up to 300 °C. Thermal coefficient of avalanche breakdown increases with the temperature to around… read more here.
Keywords: schottky barrier; avalanche; avalanche breakdown; barrier rectifiers ... See more keywords
Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2860948
Abstract: The electrical parameters degradations of a radio frequency lateral-diffused metal–oxide–semiconductor transistor under switch-OFF avalanche breakdown stress have been first experimentally investigated. A modified three-port dc-IV method is proposed to demonstrate the degradation mechanisms. It shows… read more here.
Keywords: induced electrical; avalanche breakdown; switch avalanche; electrical degradations ... See more keywords
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617030095
Abstract: Abstractp+–n0–n+ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm2. It is shown that the… read more here.
Keywords: voltage; avalanche breakdown; current voltage; sic diodes ... See more keywords
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060198
Abstract: The avalanche breakdown of a p–n junction is investigated experimentally in order to study the temporal distribution of microplasma pulses. It is revealed that the observed type of microplasma noise is not described by the… read more here.
Keywords: approach modeling; avalanche breakdown; simulation approach; breakdown junction ... See more keywords
A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "Energies"
DOI: 10.3390/en10040452
Abstract: This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for… read more here.
Keywords: breakdown robustness; avalanche breakdown; silicon carbide; power mosfets ... See more keywords