Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2991351
Abstract: We present a novel design of fine segmented low gain avalanche diodes (LGAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than $10~\mu \text{m}$ ,… read more here.
Keywords: tex math; gain avalanche; gain; inline formula ... See more keywords
Probability Distribution of After Pulsing in Passive-Quenched Single-Photon Avalanche Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2717463
Abstract: The resolution and accuracy of the number of photons detected by a silicon photomultiplier (SiPM) are limited by the excess noise, which consists mainly of after pulsing and optical crosstalk. Since these excess noises are… read more here.
Keywords: photon avalanche; single photon; probability; avalanche diodes ... See more keywords
Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3071171
Abstract: We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers… read more here.
Keywords: damage; single photon; photon avalanche; displacement damage ... See more keywords
Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.455513
Abstract: This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS… read more here.
Keywords: 110 cmos; avalanche diodes; single photon; photon avalanche ... See more keywords