Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2019.107728
Abstract: Abstract A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while… read more here.
Keywords: impact ionization; hole impact; avalanche; avalanche photodiodes ... See more keywords
Design and Fabrication of High-Efficiency, Low-Power, and Low-Leakage Si-Avalanche Photodiodes for Low-Light Sensing
Sign Up to like & getrecommendations! Published in 2023 at "ACS Photonics"
DOI: 10.1021/acsphotonics.3c00026
Abstract: Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous application goals have contributed to steady improvements over several decades. The characteristic high operating voltages and the need for thick absorber… read more here.
Keywords: avalanche photodiodes; high efficiency; efficiency low; power ... See more keywords
Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
Sign Up to like & getrecommendations! Published in 2019 at "Nature Photonics"
DOI: 10.1038/s41566-019-0477-4
Abstract: Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-speed data communications and light detection and ranging (LIDAR) systems. Unfortunately, the InP and InAlAs used as the gain material in these APDs have… read more here.
Keywords: avalanche; avalanche photodiodes; sensitivity; noise ... See more keywords
Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5054753
Abstract: Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300… read more here.
Keywords: short wave; extended short; wave infrared; avalanche photodiodes ... See more keywords
Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abf957
Abstract: Semiconductor-based avalanche photodiodes (APDs) have the advantages of lower power and simpler fabrication of arrays compared with photomultiplier tubes. It is critical for weak-light imaging that the APD is operated under back illumination and with… read more here.
Keywords: gain; avalanche photodiodes; aln periodically; gan aln ... See more keywords
An excess noise measurement system for weak responsivity avalanche photodiodes
Sign Up to like & getrecommendations! Published in 2018 at "Measurement Science and Technology"
DOI: 10.1088/1361-6501/aabc8b
Abstract: A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure… read more here.
Keywords: measurement; excess noise; system; avalanche photodiodes ... See more keywords
A review on III-V compound semiconductor short wave infrared avalanche photodiodes.
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac53d3
Abstract: The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated photonics system. Specifically, III-V compound APD has become one of the main applications of optical fiber communication reception due to adaptable bandgap and… read more here.
Keywords: compound; iii compound; avalanche photodiodes; apds ... See more keywords
Digital Alloy InAlAs Avalanche Photodiodes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2018.2844114
Abstract: InAlAs digital alloy avalanche photodiodes exhibit lower excess noise than those fabricated from conventional random alloy material. Experiment and Monte Carlo simulation both show that relative to the random alloy the ionization probability for electrons… read more here.
Keywords: inalas avalanche; alloy; digital alloy; avalanche photodiodes ... See more keywords
Improved Planar InAs Avalanche Photodiodes With Reduced Dark Current and Increased Responsivity
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2019.2905535
Abstract: Indium Arsenide (InAs) infrared photodiodes provide high quantum efficiency in the wavelength range of 1.0–3.0 μm. Planar diode configuration has been adopted to reduce surface leakage. In this work, new fabrication procedures for planar InAs… read more here.
Keywords: dark current; avalanche photodiodes; inas avalanche; planar inas ... See more keywords
Comparison of Different Period Digital Alloy Al${}_{\text{0.7}}$InAsSb Avalanche Photodiodes
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2019.2918676
Abstract: We report Al0.7InAsSb avalanche photodiodes grow as ternary–binary and binary–binary digital alloys. Their characteristics of ideality factor, activation energy, temperature-dependent excess noise, temperature stability, and impact ionization coefficients are compared. read more here.
Keywords: comparison different; avalanche; avalanche photodiodes; digital alloy ... See more keywords
Analysis of Defect-Related Electrical Fatigue in 4H-SiC Avalanche Photodiodes
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2018.2823706
Abstract: SiC-based avalanche photodiodes (APDs) are the preferred devices for use in high-sensitivity UV detectors. However, the defect densities on the surface or in the bulk of the SiC epitaxial layer limit the performance of APDs.… read more here.
Keywords: analysis defect; electrical fatigue; fatigue sic; avalanche photodiodes ... See more keywords