Breakdown Voltage Walk-in Phenomenon and Optimization for the Trench-Gate p-Type VDMOS Under Single Avalanche Stress
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DOI: 10.1109/ted.2020.2988860
Abstract: An anomalous breakdown voltage (BV) walk-in phenomenon of the trench-gate p-type vertical double-diffused metal–oxide–semiconductor (VDMOS) after single avalanche stress has been experimentally investigated. It is found that the BV of the VDMOS is decreased after… read more here.
Keywords: trench gate; gate type; avalanche stress; single avalanche ... See more keywords