Space charge studies in graphene based avalanche transit time devices
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106899
Abstract: Abstract Avalanche multiplication process in avalanche transit time devices results in large number of electrons-hole pairs (EHPs). Therefore, there is considerable temperature rise in the junction. This high temperature than normal operating one, leads to… read more here.
Keywords: avalanche transit; time devices; space; transit time ... See more keywords
Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2024.3478091
Abstract: In this article, a lateral AlGaN/GaN high-electron-mobility avalanche-transit-time (HEMATT) transistor based on the gate-structure (G-HEMATT) is first demonstrated. The presence of the gate changes the avalanche generation location and alters the current path to form… read more here.
Keywords: avalanche transit; hematt; gate; gate structure ... See more keywords