Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
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DOI: 10.1088/1361-6528/aa6051
Abstract: Epitaxial high-quality InAs/InSb axial heterostructure nanowires are of great interest due to their distinct advantages in fundamental research as well as applications in semiconductor electronic and quantum devices. Currently, nearly all the growth of InAs/InSb… read more here.
Keywords: heterostructure nanowires; insb axial; inas insb; growth ... See more keywords