Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
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DOI: 10.1016/j.mssp.2018.11.008
Abstract: Abstract AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis… read more here.
Keywords: algan gan; sic substrate; axis case; gan heterostructures ... See more keywords