Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films
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DOI: 10.1016/j.tsf.2020.138094
Abstract: Abstract Bi-Sb-Te thin films on SiO2/Si-wafer substrate were prepared by a magnetron co-sputtering process using Bi2Te3 (fixed: 50W) and Sb2Te3 (varied: 10, 15, 20 and 50W) targets. All as-deposited thin films were annealed by rapid… read more here.
Keywords: thermoelectric properties; thin films; rapid thermal; axis preferred ... See more keywords