Strain release in GaN epitaxy on 4° off-axis 4H-SiC.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202201169
Abstract: The hybrid field-effect transistor (HyFET) superior for power electronic applications can be created by harnessing the merits of two representative wide-bandgap semiconductors, GaN and SiC. Yet, the incompactness in the epitaxy techniques hinders the development… read more here.
Keywords: release gan; axis sic; strain release; epitaxy axis ... See more keywords
Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Applied Crystallography"
DOI: 10.1107/s1600576722006483
Abstract: Theoretical consideration and experimental demonstration reveal that the contrast variation in a birefringence image of an off-axis SiC wafer corresponds to the in-plane shear stress field. read more here.
Keywords: plane shear; observation plane; axis sic; birefringence ... See more keywords