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   Articles with "back end" as a keyword



Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

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recommendations! Published in 2025 at "Advanced Science"

DOI: 10.1002/advs.202509384

Abstract: HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability. Nevertheless, challenges such as double remanent polarization (2Pr)… read more here.

Keywords: hzo; zirconium rich; back end; memory ... See more keywords

Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400499

Abstract: Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back‐end‐of‐line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data‐intensive computing… read more here.

Keywords: back end; beam; molecular beam; thin film ... See more keywords

System-Level Power Optimization of Digital Audio Back End for Hearing Aids

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recommendations! Published in 2017 at "Circuits, Systems, and Signal Processing"

DOI: 10.1007/s00034-016-0419-z

Abstract: This work deals with power optimization of the audio processing back end for hearing aids—the interpolation filter, the sigma-delta ($$\Sigma \Delta )$$ΣΔ) modulator and the Class D power amplifier (PA) as a whole. Specifications are… read more here.

Keywords: back end; power optimization; system level; power ... See more keywords
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Directed motion of two-component droplets on wedge-shaped composite copper surfaces without back-end pinning

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recommendations! Published in 2020 at "Microfluidics and Nanofluidics"

DOI: 10.1007/s10404-020-02376-w

Abstract: The motion of three-phase contact line of a droplet is always halted by the contact angle hysteresis on a common solid surface. In this work, the Ag/Cu surface and Cu(OH)2/Cu surface with water contact angle… read more here.

Keywords: shaped composite; back end; end; droplet ... See more keywords

Microstructures of longitudinal/transverse welds and back-end defects and their influences on the corrosion resistance and mechanical properties of aluminum alloy extrusion profiles

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recommendations! Published in 2019 at "Journal of Materials Processing Technology"

DOI: 10.1016/j.jmatprotec.2018.12.006

Abstract: Abstract Aluminum alloy profiles manufactured by semi-continuous porthole die extrusion have three kinds of intrinsic features: longitudinal welds, transverse welds and back-end defects, which affect the corrosion resistance and mechanical properties of the profiles. In… read more here.

Keywords: transverse welds; transverse; corrosion resistance; resistance mechanical ... See more keywords

Intense pulsed light in back end processing of solar cells with passivating contacts based on amorphous or polycrystalline silicon layers

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recommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2020.110711

Abstract: Abstract Intense pulsed light (IPL) is capable of entirely replacing thermal annealing (curing and contact formation) within back end processing of silicon solar cells with passivating contacts. In order to demonstrate this, full-size silicon heterojunction… read more here.

Keywords: passivating contacts; back end; pulsed light; intense pulsed ... See more keywords
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A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

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recommendations! Published in 2020 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.0c00877

Abstract: Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von… read more here.

Keywords: back end; field effect; effect transistor;

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

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recommendations! Published in 2024 at "ACS Applied Materials & Interfaces"

DOI: 10.1021/acsami.4c10002

Abstract: Nonvolatile memory devices based on ferroelectric HfxZr1–xO2 (HZO) show great promise for back-end integrable storage and for neuromorphic accelerators, but their adoption is held back by the inability to scale down the HZO thickness without… read more here.

Keywords: laser; back end; hzo; ultrathin hfo2 ... See more keywords

An ultra high-endurance memristor using back-end-of-line amorphous SiC

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recommendations! Published in 2024 at "Scientific Reports"

DOI: 10.1038/s41598-024-64499-2

Abstract: Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we report a promising… read more here.

Keywords: memristor; back end; amorphous sic; endurance ... See more keywords

Back-end DAQ system prototype testing and integration on a full detector test system for the CMS HGCAL detector

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recommendations! Published in 2025 at "Journal of Instrumentation"

DOI: 10.1088/1748-0221/20/03/c03028

Abstract: The CMS Collaboration will replace its current endcap calorimeters with the new high granularity calorimeter (HGCAL) for operations at the HL-LHC. The HGCAL back-end DAQ (Data Acquisition) system comprises 96 FPGA-based ATCA (Advanced Telecommunications Computing… read more here.

Keywords: back end; system; daq system; detector ... See more keywords

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

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recommendations! Published in 2025 at "IEEE Access"

DOI: 10.1109/access.2025.3561255

Abstract: Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study… read more here.

Keywords: back end; metal interlayer; operation; end line ... See more keywords