Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113545
Abstract: Abstract As the technology scales down, the performance characteristics are degraded and the reliability of digital circuits against soft error and aging effects are reduced. In this paper, we propose a reliable asymmetric FinFET 6T… read more here.
Keywords: asymmetric finfet; sram cell; back gate; finfet sram ... See more keywords
Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aafccc
Abstract: This paper presents a comparison between nMOS and pMOS Omega-Gate Nanowire for different channel width (W-NW) down to 10 nm as a function of the large back gate bias variation (from +20 to -20 V)… read more here.
Keywords: voltage; back gate; nmos pmos; gate ... See more keywords
Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac0d9a
Abstract: Three different elements, silicon, selenium, and tellurium, are ion-implanted in gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy overgrown two-dimensional electron gas. While the heavy ion… read more here.
Keywords: silicon selenium; mbe grown; two dimensional; back gate ... See more keywords
Evaluation of Tradeoffs in the Design of FPGA Fabrics Using Electrostrictive 2-D FETs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2021.3059979
Abstract: The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to offer aggressive length and voltage scalability. Two key features of this device are its high-drive strength with high ON–OFF current ratio and… read more here.
Keywords: tradeoffs design; fpga fabrics; evaluation tradeoffs; design fpga ... See more keywords