Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00672-2
Abstract: In this manuscript, a novel back gated ferroelectric heterojunction TFET on SELBOX substrate (BG-Fe-HJ-STFET) has been proposed. Ferroelectric oxide is considered as gate dielectric material along with SiO2 in a vertical gate stacked manner in… read more here.
Keywords: novel back; stfet; tfet selbox; back gated ... See more keywords
Performance and reliability in back-gated CVD-grown MoS2 devices
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108173
Abstract: Abstract In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency… read more here.
Keywords: back gated; grown mos2; performance reliability; cvd grown ... See more keywords
Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
Sign Up to like & getrecommendations! Published in 2022 at "ACS Sensors"
DOI: 10.1021/acssensors.2c01511
Abstract: The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device… read more here.
Keywords: field effect; gated field; effect; back gated ... See more keywords
Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoSâ‚‚ FETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3009083
Abstract: Achieving good ohmic contacts, with minimum variability, has remained a challenge for field-effect transistors (FETs) using molybdenum disulfide (MoS2). Surface state engineering using ammonium sulfide is a great way to obtain superior and reliable contacts… read more here.
Keywords: tex math; back gated; inline formula; sub ... See more keywords
Impact of Interface Trap Charges on the Electrical Characteristics of Back-Gated 2D Negative Capacitance (NC) FET
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2019.2950668
Abstract: In this letter, a fully analytical compact drain current model of back-gated two-dimensional (2D) negative capacitance (NC) FET including interface trap charges has been developed by solving Poisson's, drift-diffusion and 1-D Landau-Khalatnikov equations, and it… read more here.
Keywords: back gated; interface trap; interface; trap charges ... See more keywords