Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3081485
Abstract: We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two… read more here.
Keywords: testing single; laser testing; laser; backside laser ... See more keywords