Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
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DOI: 10.1063/5.0003021
Abstract: The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN plasma-enhanced atomic layer deposition (PE-ALD). It is found that… read more here.
Keywords: thin films; plasma pretreatment; layer; gan thin ... See more keywords