Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
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DOI: 10.3390/ma16051968
Abstract: We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management,… read more here.
Keywords: growth; balanced inas; strain balanced; strain ... See more keywords