Sapphire Stacked Rectangular Dielectric Resonator Aperture Coupled Antenna for C-Band Applications
Sign Up to like & getrecommendations! Published in 2019 at "Wireless Personal Communications"
DOI: 10.1007/s11277-019-06437-4
Abstract: This paper presents a novel design of antenna using sapphire. An aperture coupled two- layer stacked rectangular dielectric resonator antenna structure design consists of sapphire and TMM13i. Due to sapphire and TMM13i physical attributes such… read more here.
Keywords: aperture coupled; rectangular dielectric; stacked rectangular; antenna ... See more keywords
UWB Multilayer Patch Antenna with EBG Structure for IEEE-C, X, Ku and K Band Applications
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DOI: 10.1007/s11277-021-08676-w
Abstract: In this article, a dual-layered ultra-wideband hexagonal-shaped patch antenna with an EBG structure is presented for IEEE C, X, Ku and K band applications. Parametric analysis of slots, notches, substrate height, substrate stacking, and EBG… read more here.
Keywords: band applications; antenna ebg; ebg structure; ieee band ... See more keywords
A set square design metamaterial absorber for X-band applications
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electromagnetic Waves and Applications"
DOI: 10.1080/09205071.2019.1654930
Abstract: ABSTRACT This paper presents a set square design which serves as a wideband Metamaterial Absorber (MA) for X-band applications. The simulation results show that the absorber has dB absorption bandwidth of 2.51 GHz (8.36–10.87 GHz) and the… read more here.
Keywords: set square; band applications; square design; metamaterial absorber ... See more keywords
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2023.3277796
Abstract: This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the… read more here.
Keywords: density; algan gan; power; band applications ... See more keywords
Improved Microstrip Antenna with HIS Elements and FSS Superstrate for 2.4 GHz Band Applications
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DOI: 10.1155/2018/9145373
Abstract: This research presents a microstrip antenna integrated with the high-impedance surface (HIS) elements and the modified frequency selective surface (FSS) superstrate for 2.4 GHz band applications. The electromagnetic band gap (EBG) structure was utilized in the… read more here.
Keywords: band applications; microstrip antenna; ghz band; antenna ... See more keywords
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14050931
Abstract: In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which… read more here.
Keywords: fin gate; algan gan; band applications; linearity ... See more keywords