Design and Fabrication of a TR Microsystem in Ka-Band With Si-Based 3-D Heterogeneous Integration
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DOI: 10.1109/tcpmt.2024.3385319
Abstract: This article demonstrated the design and fabrication of a transmitter and receiver (TR) microsystem in Ka-band based on silicon 3-D heterogeneous-integration (3D-HI). To achieve this microsystem, we proposed a novel silicon interposer with bonded metal… read more here.
Keywords: design fabrication; band based; microsystem band; heterogeneous integration ... See more keywords