WITHDRAWN: Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.016
Abstract: For advanced gate stacks, effective work function (WFeff) and equivalent oxide thickness (EOT) are fundamental parameters for technology optimization. On FDSOI transistors, and contrary to the bulk technologies, while EOT can be still extracted at… read more here.
Keywords: flat band; extraction; band condition; well flat ... See more keywords