Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity
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DOI: 10.1109/ted.2020.2984578
Abstract: In this article, we report a physics-based compact model of drain current for InAs-on-insulator MOSFETs. The quantum confinement effect has been incorporated in the proposed model by solving the 1-D Schrödinger–Poisson equations without using any… read more here.
Keywords: model; based compact; drain current; band nonparabolicity ... See more keywords