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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.05.262
Abstract: Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were…
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Keywords:
offsets ito;
ito heterostructures;
ga2o3;
band offsets ... See more keywords
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Published in 2021 at "Optik"
DOI: 10.1016/j.ijleo.2021.166506
Abstract: Abstract Herein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient GeO, the bulk of the films exhibited correct stoichiometry…
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Keywords:
cdse geo2;
dielectric dispersion;
offsets dielectric;
band offsets ... See more keywords
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Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2016.12.001
Abstract: Abstract We measured the band offsets of sputtered Sc 2 O 3 on thin film InGaZnO 4 (IGZO) using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of the materials using reflection electron energy loss spectroscopy…
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Keywords:
ingazno4 heterojunctions;
band offsets;
sputtered sc2o3;
sc2o3 ingazno4 ... See more keywords
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Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b01431
Abstract: An important factor in the performance of photoelectrochemical water splitting is the band edge alignment of the photoelectrodes for efficient transport and transfer of photogenerated carriers. Many studies for improving charge transfer ability between the…
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Keywords:
water splitting;
band offsets;
band;
performance ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep41567
Abstract: We report the calculated fundamental band gaps of wurtzite ternary alloys Zn1−xMxO (M = Mg, Cd) and the band offsets of the ZnO/Zn1−xMxO heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based…
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Keywords:
composition dependent;
ternary alloys;
offsets zno;
dependent band ... See more keywords
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1
Published in 2022 at "RSC Advances"
DOI: 10.1039/d2ra00847e
Abstract: Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology. The key parameters in such heterostructure configurations are the valence and conduction band offsets at the…
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Keywords:
band;
c2n mse2;
mse2 interfaces;
band offset ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0060801
Abstract: Ga2O3 is a promising wide-bandgap material for electronic applications. The metastable orthorhombic κ phase is of particular interest due to its large predicted spontaneous electrical polarization. Here, we investigate how the properties of the orthorhombic…
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Keywords:
in2o3;
orthorhombic ga2o3;
properties orthorhombic;
ga2o3 alloyed ... See more keywords
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Published in 2023 at "Physica Scripta"
DOI: 10.1088/1402-4896/acd902
Abstract: In the present work, an extensive study has been carried out on the parameters that govern the non-radiative recombination losses associated with the absorber double perovskite material. Four different device configurations have been proposed by…
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Keywords:
carrier recombination;
la2nimno6;
recombination;
minimization carrier ... See more keywords
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Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac11e7
Abstract: The determination of band offsets is crucial in the optimization of Ga2O3-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces.…
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Keywords:
fto heterojunction;
ga2o3 fto;
band offsets;
band ... See more keywords