Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202201110
Abstract: Tunable multilevel gate oxide capacitance and flat‐band voltage shift characteristics in double‐floating‐gate metal–oxide–semiconductor (DFG‐MOS) capacitors are investigated for non‐volatile memory and programmable logic device applications. The DFG‐MOS capacitor with the structure of Ag(control gate)/CeO2(upper control… read more here.
Keywords: gate oxide; flat band; band voltage; gate ... See more keywords
Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108115
Abstract: Abstract The positive flat-band voltage (VFB) shifts of 4H-SiC (0001) MOS capacitors with Al2O3/SiO2 dielectric layers were systematically investigated. After nitridation, there was a negative shift of VFB due to the dipole layer at the… read more here.
Keywords: shift; mos capacitors; flat band; dipole layer ... See more keywords