Graphene bandgap induced by ferroelectric HfO2 doped with Zr (HfZrO).
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DOI: 10.1088/1361-6528/ab814b
Abstract: e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of 1 mS and very carrier… read more here.
Keywords: bandgap induced; ferroelectric hfo2; graphene bandgap; hfzro ... See more keywords