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Published in 2024 at "Nanoscale"
DOI: 10.1039/d4nr01377h
Abstract: Gallium nitride (GaN) exhibits various potential applications in optics and optoelectronics due to its outstanding physical characteristics, including a wide direct bandgap, strong deep-ultraviolet emission, and excellent electron transport properties. However, research on the piezoelectric…
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Keywords:
semiconductor crystal;
gan nanosheets;
wide bandgap;
bandgap ... See more keywords
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Published in 2024 at "Applied Physics Reviews"
DOI: 10.1063/5.0185305
Abstract: The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result…
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Keywords:
semiconductor heterostructures;
ultra wide;
bandgap semiconductor;
wide bandgap ... See more keywords
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Published in 2022 at "Proceedings of the National Academy of Sciences of the United States of America"
DOI: 10.1073/pnas.2203287119
Abstract: Significance Implanted electronics are promising tools for cellular activity monitoring and neural stimulation for treating neurological disorders and restoring body functions. However, since these systems typically require direct interfaces with biofluids, maintaining their long-term operation…
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Keywords:
long term;
bandgap semiconductor;
semiconductor nanomembranes;
wide bandgap ... See more keywords