Direct-Indirect Bandgap Transition in Monolayer MoS2 Induced by an Individual Si Nanoparticle.
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DOI: 10.1088/1361-6528/ab50d2
Abstract: MoS2 is promising for the next generation of electronic and optoelectronic devices by virtue of its unique optical, electrical and mechanical properties. Bandgap engineering of it is an interesting topic. However, the reported factors including… read more here.
Keywords: indirect bandgap; direct indirect; mos2; bandgap transition ... See more keywords